2SK2996(HITACHI,Q)

N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element silicon transistor is housed in a TO-220NIS package with 3 through-hole pins and a tab, offering a maximum power dissipation of 45000mW. Key specifications include a ±30V gate-source voltage, 1000mΩ drain-source resistance at 10V, and typical gate charge of 38nC at 10V. Operating temperature range is -55°C to 150°C.