N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element silicon transistor is housed in a TO-220NIS through-hole package with 3 pins and a tab, offering a maximum power dissipation of 45000mW. Key specifications include a ±30V gate-source voltage, 1000mOhm drain-source resistance at 10V, and typical gate charge of 38nC at 10V. Operating temperature range is -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2996(LBS1NMAT,Q technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 1000@10VmOhm |
| Typical Gate Charge @ Vgs | 38@10VnC |
| Typical Gate Charge @ 10V | 38nC |
| Typical Input Capacitance @ Vds | 1500@20VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK2996(LBS1NMAT,Q Datasheet
Download the complete datasheet for Toshiba 2SK2996(LBS1NMAT,Q to view detailed technical specifications.
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