N-channel enhancement mode power MOSFET featuring a 900V maximum drain-source voltage and 8.5A continuous drain current. This single-element silicon transistor is housed in a TO-3P(N)IS through-hole package with 3 pins and a tab. Key specifications include a maximum drain-source on-resistance of 1250mOhm at 10V, typical gate charge of 70nC at 10V, and typical input capacitance of 2150pF at 25V. Maximum power dissipation is 90000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-3P(N)IS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK3017(LG) technical specifications.
General
| Package/Case | TO-3P(N)IS |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.8 |
| Package Width (mm) | 5 |
| Package Height (mm) | 21 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 8.5A |
| Material | Si |
| Maximum Drain Source Resistance | 1250@10VmOhm |
| Typical Gate Charge @ Vgs | 70@10VnC |
| Typical Gate Charge @ 10V | 70nC |
| Typical Input Capacitance @ Vds | 2150@25VpF |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3017(LG) Datasheet
Download the complete datasheet for Toshiba 2SK3017(LG) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.