N-channel enhancement mode silicon power MOSFET featuring a maximum drain-source voltage of 900V and a continuous drain current of 8.5A. This single-element transistor is housed in a TO-3P(N)IS plastic package with 3 pins and a tab, designed for through-hole mounting. Key electrical characteristics include a maximum drain-source on-resistance of 1250 mOhm at 10V, typical gate charge of 70 nC at 10V, and typical input capacitance of 2150 pF at 25V. Maximum power dissipation reaches 90000 mW, with an operating temperature range from -55°C to 150°C.
PackageTO-3P(N)IS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3017(NANAO) technical specifications.
General
| Package/Case | TO-3P(N)IS |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.8 |
| Package Width (mm) | 5 |
| Package Height (mm) | 21 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 8.5A |
| Material | Si |
| Maximum Drain Source Resistance | 1250@10VmOhm |
| Typical Gate Charge @ Vgs | 70@10VnC |
| Typical Gate Charge @ 10V | 70nC |
| Typical Input Capacitance @ Vds | 2150@25VpF |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3017(NANAO) Datasheet
Download the complete datasheet for Toshiba 2SK3017(NANAO) to view detailed technical specifications.
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