N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 45A continuous drain current. This single-element silicon transistor is housed in a TO-220SM surface-mount package with 3 pins and a tab. Key electrical characteristics include a maximum drain-source resistance of 12 mΩ at 10V, typical gate charge of 66 nC, and typical input capacitance of 2300 pF at 10V. Maximum power dissipation is 65W, with an operating temperature range of -55°C to 150°C.
PackageTO-220SM
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3127(SM) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220SM |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.1 |
| Package Height (mm) | 4.7(Max) |
| Package Weight (g) | 1.4 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Material | Si |
| Maximum Drain Source Resistance | 12@10VmOhm |
| Typical Gate Charge @ Vgs | 66@10VnC |
| Typical Gate Charge @ 10V | 66nC |
| Typical Input Capacitance @ Vds | 2300@10VpF |
| Maximum Power Dissipation | 65000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3127(SM) Datasheet
Download the complete datasheet for Toshiba 2SK3127(SM) to view detailed technical specifications.
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