MOSFET N-ch 500V 50A 0.140 ohm
Resistance0.14R
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
Toshiba 2SK3131(Q) technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 11nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 110mR |
| Resistance | 0.14R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK3131(Q) Datasheet
Download the complete datasheet for Toshiba 2SK3131(Q) to view detailed technical specifications.
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