N-channel MOSFET with 200V drain-source breakdown voltage and 30A continuous drain current. Features low 52mR drain-source on-resistance and 150W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Through-hole mounting with a 2-16C1B package. RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Toshiba 2SK3176(F) technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 19mm |
| Input Capacitance | 5.4nF |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 3.5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 52mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Width | 4.8mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba 2SK3176(F) Datasheet
Download the complete datasheet for Toshiba 2SK3176(F) to view detailed technical specifications.
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