N-channel enhancement mode silicon power MOSFET in a TO-3PN package. Features a maximum drain-source voltage of 200V and a continuous drain current of 30A. Offers low on-resistance of 52mΩ at 10V, typical gate charge of 125nC at 10V, and input capacitance of 5400pF at 10V. Designed for through-hole mounting with a 3-pin configuration and tab. Maximum power dissipation is 150W, operating temperature range from -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK3176(LBDNSO) technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 23.6(Max) |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 30A |
| Material | Si |
| Maximum Drain Source Resistance | 52@10VmOhm |
| Typical Gate Charge @ Vgs | 125@10VnC |
| Typical Gate Charge @ 10V | 125nC |
| Typical Input Capacitance @ Vds | 5400@10VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3176(LBDNSO) Datasheet
Download the complete datasheet for Toshiba 2SK3176(LBDNSO) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.