The 2SK3301Q is a surface mount N-channel MOSFET with a maximum drain current of 1A and a drain to source breakdown voltage of 900V. It has a maximum power dissipation of 20W and a drain to source resistance of 20 ohms. The device is packaged in a TO-252-3 package and has a maximum input capacitance of 165 picofarads. The 2SK3301Q operates over a temperature range of -40 to 150 degrees Celsius and is suitable for use in a variety of applications including power management and switching circuits.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power20W
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Technical Specifications
Toshiba 2SK3301Q technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 20R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 165pF |
| Max Power Dissipation | 20W |
| Mount | Surface Mount |
| Package Quantity | 200 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Rds On Max | 20R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK3301Q Datasheet
Download the complete datasheet for Toshiba 2SK3301Q to view detailed technical specifications.
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