2SK3316(LBS2FJ,Q)

N-channel enhancement mode power MOSFET featuring a 500V drain-source voltage and 5A continuous drain current. This single-element silicon transistor is housed in a TO-220NIS package with 3 through-hole pins and a tab, offering a maximum power dissipation of 35W. Key electrical characteristics include a ±30V gate-source voltage, 1800mOhm maximum drain-source resistance at 10V, and typical gate charge of 17nC. The component operates within a temperature range of -55°C to 150°C.