2SK3316(SONY,Q)

N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a maximum drain-source voltage of 500V and a continuous drain current of 5A. This single-element transistor is housed in a TO-220NIS package with 3 pins and a tab, offering a pin pitch of 2.54mm. Key electrical characteristics include a maximum drain-source on-resistance of 1800 mOhm at 10V, typical gate charge of 17nC at 10V, and typical input capacitance of 780pF at 10V. Maximum power dissipation is 35W, with an operating temperature range of -55°C to 150°C.