N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element silicon transistor is housed in a 4-pin TFP package with surface-mount capability, offering two tabs for enhanced thermal performance. Key electrical characteristics include a maximum gate-source voltage of ±30V and a maximum drain-source on-resistance of 1000mΩ at 10V. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 80W.
PackageTFP
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3438(T4LMATUD) technical specifications.
General
| Package/Case | TFP |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 1000@10VmOhm |
| Typical Gate Charge @ Vgs | 28@10VnC |
| Typical Gate Charge @ 10V | 28nC |
| Typical Input Capacitance @ Vds | 1200@25VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3438(T4LMATUD) Datasheet
Download the complete datasheet for Toshiba 2SK3438(T4LMATUD) to view detailed technical specifications.
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