N-channel enhancement mode power MOSFET featuring a 700V drain-source voltage and 10A continuous drain current. This single-element silicon transistor offers a maximum power dissipation of 80W and a low drain-source on-resistance of 1000mΩ at 10V. Designed for through-hole mounting, it has a 3-pin configuration with a typical gate charge of 53nC at 10V and input capacitance of 1700pF at 25V. Operating temperature range spans from -55°C to 150°C.
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3453(F) technical specifications.
General
| Basic Package Type | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 15.8 |
| Package Width (mm) | 5 |
| Package Height (mm) | 21 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 700V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 1000@10VmOhm |
| Typical Gate Charge @ Vgs | 53@10VnC |
| Typical Gate Charge @ 10V | 53nC |
| Typical Input Capacitance @ Vds | 1700@25VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK3453(F) Datasheet
Download the complete datasheet for Toshiba 2SK3453(F) to view detailed technical specifications.
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