N-channel enhancement mode silicon power MOSFET featuring a 500V drain-source voltage and 5A continuous drain current. This surface-mount component is housed in a 4-pin TFP package with two tabs, offering a maximum power dissipation of 50000mW. Key electrical characteristics include a ±30V gate-source voltage, 1500mΩ maximum drain-source resistance at 10V, and typical gate charge of 17nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTFP
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3466(T4LIKEDA) technical specifications.
General
| Package/Case | TFP |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 17@10VnC |
| Typical Gate Charge @ 10V | 17nC |
| Typical Input Capacitance @ Vds | 780@10VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3466(T4LIKEDA) Datasheet
Download the complete datasheet for Toshiba 2SK3466(T4LIKEDA) to view detailed technical specifications.
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