N-channel enhancement mode power MOSFET featuring a 500V drain-source voltage and 5A continuous drain current. This single-element silicon transistor is housed in a 4-pin TFP package with two tabs, designed for surface mounting. Key specifications include a maximum drain-source on-resistance of 1500 mOhm at 10V, typical gate charge of 17 nC at 10V, and typical input capacitance of 780 pF at 10V. Maximum power dissipation reaches 50W, with an operating temperature range of -55°C to 150°C.
PackageTFP
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3466(TE24L) technical specifications.
General
| Package/Case | TFP |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 17@10VnC |
| Typical Gate Charge @ 10V | 17nC |
| Typical Input Capacitance @ Vds | 780@10VpF |
| Maximum Power Dissipation | 50000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3466(TE24L) Datasheet
Download the complete datasheet for Toshiba 2SK3466(TE24L) to view detailed technical specifications.
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