N-channel enhancement mode power MOSFET featuring a 400V drain-source voltage and 10A continuous drain current. This single-element silicon transistor is housed in a 4-pin TFP surface-mount package with two tabs, measuring a maximum of 9.2mm x 9.2mm x 3mm. Key electrical characteristics include a maximum drain-source on-resistance of 550mΩ at 10V, typical gate charge of 34nC at 10V, and typical input capacitance of 1340pF at 10V. Maximum power dissipation is 80W, with an operating temperature range of -55°C to 150°C.
PackageTFP
MountingSurface Mount
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Technical Specifications
Toshiba 2SK3499(T4LIKEDA1) technical specifications.
General
| Package Family Name | TFP |
| Package/Case | TFP |
| Pin Count | 4 |
| PCB | 2 |
| Tab | 2Tab |
| Package Length (mm) | 9.2(Max) |
| Package Width (mm) | 9.2(Max) |
| Package Height (mm) | 3(Max) |
| Seated Plane Height (mm) | 3(Max) |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 550@10VmOhm |
| Typical Gate Charge @ Vgs | 34@10VnC |
| Typical Gate Charge @ 10V | 34nC |
| Typical Input Capacitance @ Vds | 1340@10VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK3499(T4LIKEDA1) Datasheet
Download the complete datasheet for Toshiba 2SK3499(T4LIKEDA1) to view detailed technical specifications.
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