2SK3562(NCN,Q)

N-channel Silicon Power MOSFET featuring a 600V drain-source voltage and 6A continuous drain current. This single-element transistor utilizes pi-MOS VI process technology and is housed in a TO-220SIS through-hole package with 3 pins and a tab. Key specifications include a maximum drain-source resistance of 1250 mOhm at 10V and a typical gate charge of 28 nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 40000 mW.