N-Channel Power MOSFET featuring 900V drain-source breakdown voltage and 5A continuous drain current. This through-hole mounted component offers a low 2.5 ohm drain-source on-resistance and 45W maximum power dissipation. Designed for general-purpose power applications, it operates within a temperature range of -55°C to 150°C and has a gate-source voltage rating of 30V.
PackageTO-220-3
Current Rating5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Toshiba 2SK3565 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.15nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| RoHS Compliant | No |
| Termination | Through Hole |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba 2SK3565 Datasheet
Download the complete datasheet for Toshiba 2SK3565 to view detailed technical specifications.
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