2SK3569(HIP,Q)

N-channel Silicon Power MOSFET featuring a 600V drain-source voltage and 10A continuous drain current. This through-hole component is housed in a TO-220SIS package with 3 pins and a tab, offering a maximum power dissipation of 45000mW. Key electrical characteristics include a ±30V gate-source voltage, 750mΩ drain-source on-resistance at 10V, and a typical gate charge of 42nC at 10V. Operating temperature range spans from -55°C to 150°C.