N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 7A continuous drain current. This through-hole component, housed in a TO-3PN plastic package, offers a low drain-source on-resistance of 1700 mOhm at 10V. Key specifications include a typical gate charge of 35nC and input capacitance of 1500pF, with a maximum power dissipation of 150W. Operating temperature range is -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3633(F) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 22.7(Max) |
| Pin Pitch (mm) | 5.45 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 7A |
| Material | Si |
| Maximum Drain Source Resistance | 1700@10VmOhm |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Typical Gate Charge @ 10V | 35nC |
| Typical Input Capacitance @ Vds | 1500@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SK3633(F) Datasheet
Download the complete datasheet for Toshiba 2SK3633(F) to view detailed technical specifications.
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