2SK3667(LBS1NMAT,Q

N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 7.5A continuous drain current. This single-element silicon transistor is housed in a TO-220SIS through-hole package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, 1000mΩ drain-source resistance at 10V, and 33nC typical gate charge. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.