2SK3667(Q,M)

N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 7.5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220SIS through-hole package with a tab, offering a maximum power dissipation of 45000mW. Key electrical characteristics include a ±30V gate-source voltage, 1000mOhm maximum drain-source resistance at 10V, and typical gate charge of 33nC at 10V. Operating temperature range spans from -55°C to 150°C.