N-channel enhancement mode silicon power MOSFET featuring a 600V drain-source voltage and 2A continuous drain current. This through-hole component utilizes a TO-220SIS package with 3 pins and a tab, designed for single element configuration. Key specifications include a maximum gate-source voltage of ±30V, a maximum gate threshold voltage of 4V, and a typical drain-source on-resistance of 4500 mΩ at 10V. Maximum power dissipation is 25000 mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220SIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3767(LBS2LECIPQ technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220SIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
17
Pin Pitch (mm)
2.54
Package Weight (g)
1.7
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS VI
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
4500@10VmOhm
Typical Gate Charge @ Vgs
9@10VnC
Typical Gate Charge @ 10V
9nC
Typical Input Capacitance @ Vds
320@10VpF
Maximum Power Dissipation
25000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SK3767(LBS2LECIPQ Datasheet
Download the complete datasheet for Toshiba 2SK3767(LBS2LECIPQ to view detailed technical specifications.
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