PackageSC
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Toshiba 2SK3878(F,T) technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.45nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK3878(F,T) Datasheet
Download the complete datasheet for Toshiba 2SK3878(F,T) to view detailed technical specifications.
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