N-channel silicon power MOSFET featuring 800V drain-source voltage and 6.5A continuous drain current. This through-hole component is housed in a TO-3P(N)IS package with 3 pins and a tab, offering a maximum power dissipation of 80W. It operates within a temperature range of -55°C to 150°C and exhibits a low drain-source on-resistance of 1700 mOhm at 10V.
PackageTO-3P(N)IS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK3880(F) technical specifications.
General
| Package/Case | TO-3P(N)IS |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.8 |
| Package Width (mm) | 5 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6.5A |
| Material | Si |
| Maximum Drain Source Resistance | 1700@10VmOhm |
| Typical Gate Charge @ Vgs | 35@10VnC |
| Typical Gate Charge @ 10V | 35nC |
| Typical Input Capacitance @ Vds | 1500@25VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK3880(F) Datasheet
Download the complete datasheet for Toshiba 2SK3880(F) to view detailed technical specifications.
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