TOSHIBA

2SK3906(Q)

Datasheet

Toshiba

2SK3906(Q)

Name: 2SK3906(Q) Toshiba
Brand: Toshiba
SKU: 2SK3906(Q)

MOSFET N-CH 600V 20A 330mR TO-3PN

N-channel MOSFET with 600V drain-to-source breakdown voltage and 20A continuous drain current. Features 330mΩ maximum drain-to-source resistance at a nominal 4V gate-to-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150W. This through-hole component has a 10ns fall time and 4.25nF input capacitance.

MountingThrough Hole

PolarityN-CHANNEL

Power150W

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Technical Specifications

Toshiba 2SK3906(Q) technical specifications.

General

Continuous Drain Current (ID)	20A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	330mR
Drain to Source Voltage (Vdss)	600V
Dual Supply Voltage	600V
Fall Time	10ns
Gate to Source Voltage (Vgs)	30V
Height	19mm
Input Capacitance	4.25nF
Lead Free	Lead Free
Length	15.9mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150W
Mount	Through Hole
Nominal Vgs	4V
Number of Elements	1
Package Quantity	50
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	150W
Radiation Hardening	No
Rds On Max	330mR
Reach SVHC Compliant	Unknown
Termination	Through Hole
Threshold Voltage	4V
Width	4.8mm