N-channel MOSFET with 60V drain-source voltage and 5A continuous drain current. Features 100mΩ Rds On (Max) at a nominal 2.5V Vgs, 730pF input capacitance, and a 4ns fall time. Encased in a TO-251AA package with tin/silver contact plating, this through-hole mount component operates from -55°C to 150°C and offers 20W power dissipation. RoHS compliant.
PackageTO-251AA
MountingThrough Hole
Power20W
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Technical Specifications
Toshiba 2SK4017(Q) technical specifications.
General
| Package/Case | TO-251AA |
| Contact Plating | Tin, Silver |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.5mm |
| Input Capacitance | 730pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Nominal Vgs | 2.5V |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | U-MOSIII |
| Threshold Voltage | 2.5V |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK4017(Q) Datasheet
Download the complete datasheet for Toshiba 2SK4017(Q) to view detailed technical specifications.
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