N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 600V maximum collector-emitter voltage and 10A maximum continuous collector current. Offers 30W maximum power dissipation and a typical collector-emitter saturation voltage of 2.1V. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-220NIS plastic package with 3 pins and a tab.
PackageTO-220NIS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba GT10J303(LBS2KOR) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
10A
Maximum Power Dissipation
30000mW
Typical Collector Emitter Saturation Voltage
2.1V
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba GT10J303(LBS2KOR) Datasheet
Download the complete datasheet for Toshiba GT10J303(LBS2KOR) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.