N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 600V maximum collector-emitter voltage and 10A maximum continuous collector current. This single IGBT configuration offers a 30000mW maximum power dissipation and a typical collector-emitter saturation voltage of 2.1V. Packaged in a TO-220NIS plastic case with 3 pins and a tab, it operates within a temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba GT10J303(LBS2MBSN1 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 10A |
| Maximum Power Dissipation | 30000mW |
| Typical Collector Emitter Saturation Voltage | 2.1V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba GT10J303(LBS2MBSN1 Datasheet
Download the complete datasheet for Toshiba GT10J303(LBS2MBSN1 to view detailed technical specifications.
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