N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 600V collector-emitter voltage and 15A continuous collector current. Maximum power dissipation is 35000mW with a typical collector-emitter saturation voltage of 2.1V. Packaged in a TO-220SIS configuration with 3 pins and a tab, suitable for operation up to 150°C.
PackageTO-220SIS
MountingThrough Hole
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Technical Specifications
Toshiba GT15J301(LBS2KOR) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220SIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
17
Pin Pitch (mm)
2.54
Package Weight (g)
1.7
Package Material
Plastic
Mounting
Through Hole
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage
600V
Maximum Gate Emitter Voltage
±20V
Maximum Continuous Collector Current
15A
Maximum Power Dissipation
35000mW
Typical Collector Emitter Saturation Voltage
2.1V
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba GT15J301(LBS2KOR) Datasheet
Download the complete datasheet for Toshiba GT15J301(LBS2KOR) to view detailed technical specifications.
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