N-channel Insulated Gate Bipolar Transistor (IGBT) chip for through-hole mounting. Features a 600V collector-emitter voltage and 15A continuous collector current. This single-configuration IGBT offers a maximum power dissipation of 35000mW and a typical collector-emitter saturation voltage of 2.1V. Housed in a TO-220SIS package with 3 pins and a tab, it operates up to 150°C.
PackageTO-220SIS
MountingThrough Hole
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Technical Specifications
Toshiba GT15J301(LBYASKTO) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220SIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 17 |
| Pin Pitch (mm) | 2.54 |
| Package Weight (g) | 1.7 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Continuous Collector Current | 15A |
| Maximum Power Dissipation | 35000mW |
| Typical Collector Emitter Saturation Voltage | 2.1V |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba GT15J301(LBYASKTO) Datasheet
Download the complete datasheet for Toshiba GT15J301(LBYASKTO) to view detailed technical specifications.
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