The GT20J101 is a 600V insulated gate bipolar transistor with a maximum collector current of 20A and a maximum power dissipation of 130W. It is packaged in a flange mount, R-PSFM-T3 package and is suitable for through hole mounting. The transistor operates over a temperature range of -55°C to 150°C. It is not radiation hardened and is not compliant with RoHS regulations.
MountingThrough Hole
Power130W
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Technical Specifications
Toshiba GT20J101 technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba GT20J101 Datasheet
Download the complete datasheet for Toshiba GT20J101 to view detailed technical specifications.
No datasheet is available for this part.