Toshiba
GT25Q102
TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, LEAD FREE, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor
Power200W
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Technical Specifications
Toshiba GT25Q102 technical specifications.
General
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage (VCEO)
1.2kV
Max Operating Temperature
150°C
Max Power Dissipation
200W
Power Dissipation
200W
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Toshiba GT25Q102 Datasheet
Download the complete datasheet for Toshiba GT25Q102 to view detailed technical specifications.
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