Toshiba
GT30J121
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, LEAD FREE, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba GT30J121 technical specifications.
General
Height
20mm
Length
15.9mm
Max Collector Current
30A
Max Operating Temperature
150°C
Max Power Dissipation
170W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
No
Width
4.8mm
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba GT30J121 Datasheet
Download the complete datasheet for Toshiba GT30J121 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.