Toshiba
GT30J324
TRANSISTOR 30 A, 600 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor
MountingThrough Hole
Power170W
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Technical Specifications
Toshiba GT30J324 technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
30A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Through Hole
Packaging
Rail/Tube
Power Dissipation
170W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Compliance
RoHS
Not CompliantNo
Datasheet
Toshiba GT30J324 Datasheet
Download the complete datasheet for Toshiba GT30J324 to view detailed technical specifications.
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