The GT30J324Q is a 600V insulated gate bipolar transistor with a maximum collector current of 30A and a maximum power dissipation of 170W. It is packaged in a through-hole configuration and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The transistor is lead-free and available in a packaging quantity of 50 units per rail/Tube.
MountingThrough Hole
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Technical Specifications
Toshiba GT30J324Q technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector-emitter Voltage-Max | 2.45V |
| Height | 19mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 60ns |
| Width | 4.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba GT30J324Q Datasheet
Download the complete datasheet for Toshiba GT30J324Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.