Toshiba GT50J102 technical specifications.
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Packaging | Tray |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
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