The HN1B04FE-Y,LF is a surface mount bipolar junction transistor with a maximum collector current of 150mA and a maximum power dissipation of 100mW. It has a collector-emitter breakdown voltage of 50V and a transition frequency of 80MHz. The transistor is packaged in a small outline R-PDSO-F6 package and is available in cut tape form. It is not RoHS compliant.
MountingSurface Mount
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Technical Specifications
Toshiba HN1B04FE-Y,LF technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | No |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Not Compliant |
Datasheet
Toshiba HN1B04FE-Y,LF Datasheet
Download the complete datasheet for Toshiba HN1B04FE-Y,LF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.