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Technical Specifications
Toshiba HN1B04FU-GR,LF(T technical specifications.
General
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 120 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba HN1B04FU-GR,LF(T Datasheet
Download the complete datasheet for Toshiba HN1B04FU-GR,LF(T to view detailed technical specifications.
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