The HN2A01FE-Y(TE85L,F is a surface mount transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 150mA. It has a maximum power dissipation of 100mW and a transition frequency of 80MHz. The device is packaged in a quantity of 4000 units on cut tape.
MountingSurface Mount
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Technical Specifications
Toshiba HN2A01FE-Y(TE85L,F technical specifications.
General
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Power Dissipation | 100mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Cut Tape |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba HN2A01FE-Y(TE85L,F Datasheet
Download the complete datasheet for Toshiba HN2A01FE-Y(TE85L,F to view detailed technical specifications.
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