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Technical Specifications
Toshiba HN2A01FU-GR(TE85LF technical specifications.
General
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -100mV |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 120 |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba HN2A01FU-GR(TE85LF Datasheet
Download the complete datasheet for Toshiba HN2A01FU-GR(TE85LF to view detailed technical specifications.
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