Dual NPN/PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 6-pin lead-frame SMT package with gull-wing leads, measuring 2.9mm x 1.6mm x 1.1mm. Offers a maximum collector-emitter voltage of 50V and a maximum DC collector current of 0.15A. Maximum power dissipation is 300mW, with a minimum DC current gain of 120. Operating temperature range is -55°C to 125°C.
PackageSM
MountingSurface Mount
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Technical Specifications
Toshiba HN3B01F(TE85R) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | SM |
| Lead Shape | Gull-wing |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.3(Max) |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN|PNP |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 60@NPN|50@PNPV |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 300mW |
| Material | Si |
| Minimum DC Current Gain | 120@2mA@6V |
| Maximum Transition Frequency | 150(Typ)@NPN|120(Typ)@PNPMHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN3B01F(TE85R) Datasheet
Download the complete datasheet for Toshiba HN3B01F(TE85R) to view detailed technical specifications.
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