The HN3C01F(TE85L,F) is a dual NPN bipolar junction transistor from Toshiba. It features a maximum collector-emitter voltage of 20V and a maximum power dissipation of 300mW. The device is constructed from silicon material and has a minimum DC current gain of 40 at 5mA and 10V. The transistor is suitable for use in surface mount applications and has a maximum operating temperature of 125 degrees Celsius.
PackageSM
MountingSurface Mount
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Technical Specifications
Toshiba HN3C01F(TE85L,F) technical specifications.
General
| Package/Case | SM |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.26 |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 3V |
| Maximum Collector-Emitter Voltage | 20V |
| Maximum DC Collector Current | 0.05A |
| Maximum Power Dissipation | 300mW |
| Material | Si |
| Minimum DC Current Gain | 40@5mA@10V |
| Maximum Transition Frequency | 1400(Typ)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 125°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba HN3C01F(TE85L,F) Datasheet
Download the complete datasheet for Toshiba HN3C01F(TE85L,F) to view detailed technical specifications.
No datasheet is available for this part.