Toshiba
HN3C10FUTE85LF
SOT-26 Surface Mount NPN BJT, 12V Collector Emitter Breakdown Voltage, 80mA Max Collector Current
The HN3C10FUTE85LF is a surface mount NPN bipolar junction transistor from Toshiba, packaged in a SOT-26 case. It features a collector emitter breakdown voltage of 12V and a maximum collector current of 80mA. The device is rated for a maximum power dissipation of 200mW and has a transition frequency of 7GHz. It is available in quantities of 3000, packaged on tape and reel for surface mount assembly.
PackageSOT-26
MountingSurface Mount
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Technical Specifications
Toshiba HN3C10FUTE85LF technical specifications.
General
| Package/Case | SOT-26 |
| Collector Emitter Breakdown Voltage | 12V |
| Gain | 11.5dB |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 80mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Transition Frequency | 7GHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba HN3C10FUTE85LF Datasheet
Download the complete datasheet for Toshiba HN3C10FUTE85LF to view detailed technical specifications.
No datasheet is available for this part.
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