PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a dual common emitter configuration with 2 elements per chip. Maximum ratings include 25V collector-emitter voltage, 0.8A collector current, and 300mW power dissipation. Offers a minimum DC current gain of 40 at 800mA/1V and 100 at 100mA/1V, with a typical transition frequency of 120MHz. Housed in a 5-pin SMV (SOT-25) small outline plastic package with gull-wing leads, measuring 2.9mm x 1.6mm x 1.1mm.
PackageSMV
MountingSurface Mount
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Technical Specifications
Toshiba HN4A08J(TE85L,F) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SSOP |
| Package/Case | SMV |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.6 |
| Package Height (mm) | 1.1 |
| Seated Plane Height (mm) | 1.15 |
| Pin Pitch (mm) | 0.95 |
| Package Weight (g) | 0.014 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | SOT-25 |
| Type | PNP |
| Configuration | Dual Common Emitter |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 30V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 25V |
| Maximum DC Collector Current | 0.8A |
| Maximum Power Dissipation | 300mW |
| Minimum DC Current Gain | 40@800mA@1V|100@100mA@1V |
| Maximum Transition Frequency | 120(Typ)MHz |
| Category | Bipolar Small Signal |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN4A08J(TE85L,F) Datasheet
Download the complete datasheet for Toshiba HN4A08J(TE85L,F) to view detailed technical specifications.
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