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Technical Specifications
Toshiba HN4A51JTE85LF technical specifications.
General
| Package/Case | SOT-25 |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba HN4A51JTE85LF Datasheet
Download the complete datasheet for Toshiba HN4A51JTE85LF to view detailed technical specifications.
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