PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features dual common base configuration with two elements per chip. Maximum collector-emitter voltage is 50V, with a maximum DC collector current of 0.15A. Offers a minimum DC current gain of 120 at 2mA/6V and a maximum transition frequency of 60MHz. Housed in a compact 5-pin USV package (2mm x 1.25mm x 0.9mm) with gull-wing leads.
PackageUSV
MountingSurface Mount
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Technical Specifications
Toshiba HN4A56JU(T5LKOMT) technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | USV |
| Lead Shape | Gull-wing |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 0.65 |
| Package Weight (g) | 0.006 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | PNP |
| Configuration | Dual Common Base |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 50V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 200mW |
| Minimum DC Current Gain | 120@2mA@6V |
| Maximum Transition Frequency | 60(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN4A56JU(T5LKOMT) Datasheet
Download the complete datasheet for Toshiba HN4A56JU(T5LKOMT) to view detailed technical specifications.
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