Dual common emitter NPN/PNP bipolar junction transistor (BJT) for surface mount applications. Features a 5-pin ESV package with flat leads, measuring 1.6mm x 1.2mm x 0.55mm. Supports up to 50V collector-emitter voltage and 0.15A DC collector current, with a minimum DC current gain of 120. Operates across a temperature range of -55°C to 150°C.
PackageESV
MountingSurface Mount
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Technical Specifications
Toshiba HN4B01JE(TR3SONY,F technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | ESV |
| Lead Shape | Flat |
| Pin Count | 5 |
| PCB | 5 |
| Package Length (mm) | 1.6 |
| Package Width (mm) | 1.2 |
| Package Height (mm) | 0.55 |
| Seated Plane Height (mm) | 0.55 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Type | NPN|PNP |
| Configuration | Dual Common Emitter |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 60@NPN|50@PNPV |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 0.15A |
| Maximum Power Dissipation | 100mW |
| Material | Si |
| Minimum DC Current Gain | 120@2mA@6V |
| Maximum Transition Frequency | 80(Min)MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba HN4B01JE(TR3SONY,F Datasheet
Download the complete datasheet for Toshiba HN4B01JE(TR3SONY,F to view detailed technical specifications.
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