Toshiba
JDV2S10T
DIODE 10 V, SILICON, VARIABLE CAPACITANCE DIODE, 1-1H1A, 2 PIN, Variable Capacitance Diode
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Technical Specifications
Toshiba JDV2S10T technical specifications.
General
Max Operating Temperature
125
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
Rep Pk Reverse Voltage-Max
10
Breakdown Voltage-Min
10
Compliance
RoHS
No
Eccn Code
EAR99
HTS Code
8541.10.00.80
REACH
unknown
Military Spec
False
Datasheet
Toshiba JDV2S10T Datasheet
Download the complete datasheet for Toshiba JDV2S10T to view detailed technical specifications.
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