Toshiba
JDV2S19S
DIODE UHF BAND, 3.665 pF, SILICON, VARIABLE CAPACITANCE DIODE, 1-1K1A, SESC, 2 PIN, Variable Capacitance Diode
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Technical Specifications
Toshiba JDV2S19S technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
Rep Pk Reverse Voltage-Max
10
Compliance
Eccn Code
EAR99
HTS Code
8541.10.00.80
REACH
unknown
Military Spec
False
Datasheet
Toshiba JDV2S19S Datasheet
Download the complete datasheet for Toshiba JDV2S19S to view detailed technical specifications.
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